Shallow trench isolation structure and fabricating method thereof

ABSTRACT

A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

FIELD OF THE INVENTION

The present invention relates to a shallow trench isolation structure and a fabricating method thereof, and more particularly to a shallow trench isolation structure and a fabricating method of a shallow trench isolation structure in the manufacture of a semiconductor device.

BACKGROUND OF THE INVENTION

Nowadays, in the mainstream of integrated circuit production, a low voltage logic circuit and a high voltage semiconductor device are implemented on the same integrated circuit chip. For providing effective isolation between adjacent electronic components, in the low voltage logic circuit and a high voltage semiconductor device, an isolation structure is usually formed in the integrated circuit chip to separate adjacent electronic components from each other. As known, a shallow trench isolation (STI) structure is one of the most popular isolation structures. Moreover, the shallow trench isolation structures of the low voltage logic circuit and the high voltage semiconductor device are simultaneously produced in the same fabricating process.

As the device size of the low voltage logic circuit is gradually developed toward miniaturization because of the process progress, the width and the depth of the shallow trench isolation structure are reduced. If the dimension of the shallow trench isolation structure of the high voltage semiconductor device is identical to the dimension of the shallow trench isolation structure of the low voltage logic circuit, the isolation efficacy of the high voltage semiconductor device is unsatisfied. Therefore, there is a need of providing an improved fabricating method of a shallow trench isolation structure.

SUMMARY OF THE INVENTION

Therefore, the object of the present invention is to provide a fabricating method of a shallow trench isolation structure in order to achieve effective isolation.

In accordance with an aspect, the present invention provides a fabricating method of a shallow trench isolation structure. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

In an embodiment, a low voltage device area is further defined in the substrate, and a second shallow trench is further formed in the low voltage device area by the second etching process. The first shallow trench is deeper than the second shallow trench.

In an embodiment, an inclination angle of a sidewall of the preliminary shallow trench is from 105 to 135 degrees, so that the first shallow trench has a shoulder part with a gentle slope.

In an embodiment, after the first shallow trench isolation structure is formed, the fabricating method further includes the following steps. A pre-clean process is performed to treat the shallow trench isolation structure, so that a top surface of the shallow trench isolation structure is shrunk to a location below the shoulder part. Then, a high voltage gate dielectric layer is formed on the shallow trench isolation structure and a surface of the substrate.

In an embodiment, after the preliminary shallow trench is formed, the fabricating method further includes a step of forming a spacer on a sidewall of the preliminary shallow trench, wherein the spacer is made of the same material as the dielectric material.

In an embodiment, after the preliminary shallow trench is formed and before the second etching process is done, the fabricating method further includes a step of performing an ion implantation process to dope the high voltage device area of the substrate with a dopant, so that a high voltage well region is formed in the high voltage device area.

In an embodiment, the step of filling the dielectric material in the first shallow trench includes sub-steps of performing a high density plasma chemical vapor deposition process to deposit the dielectric material, and performing a chemical mechanical polishing process to flatten the dielectric material.

In accordance with another aspect, the present invention provides a shallow trench isolation structure. The shallow trench isolation structure includes a substrate, a first shallow trench and a dielectric material layer. A high voltage device area is defined in the substrate. The first shallow trench is formed in the high voltage device area. The first shallow trench has an upper portion and a lower portion. A sidewall of the upper portion has a shoulder part with a gentle slope. The dielectric material layer is filled within the first shallow trench to a level near the shoulder part.

In an embodiment, a low voltage device area is further defined in the substrate, and a second shallow trench is further formed in the low voltage device area by the second etching process. The first shallow trench is deeper than the second shallow trench.

In an embodiment, an inclination angle of the shoulder part is from 105 to 135 degrees.

In an embodiment, the substrate is a silicon substrate, the dielectric material is silicon oxide, and the high voltage gate dielectric layer is made of silicon dioxide.

In accordance with a further aspect, the present invention provides a high voltage metal-oxide-semiconductor field-effect transistor. The high voltage metal-oxide-semiconductor field-effect transistor includes a substrate, a channel region, at least one shallow trench and a dielectric material layer. The channel region is formed in the substrate. The shallow trench is located at a side of the channel region. The shallow trench has an upper portion and a lower portion. A sidewall of the upper portion has a shoulder part with a gentle slope. The dielectric material layer is filled within the first shallow trench to a level near the shoulder part.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objects and advantages of the present invention will become more readily apparent to those ordinarily skilled in the art after reviewing the following detailed description and accompanying drawings, in which:

FIGS. 1A˜1J are schematic cross-sectional views illustrating a process of fabricating a shallow trench isolation (STI) structure according to an embodiment of the present invention; and

FIG. 2 is a schematic cross-sectional view illustrating a symmetric metal-oxide-semiconductor field-effect transistor with the shallow trench isolation structure produced by the method of the present invention; and

FIG. 3 is a schematic cross-sectional view illustrating an asymmetric metal-oxide-semiconductor field-effect transistor with the shallow trench isolation structure produced by the method of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention will now be described more specifically with reference to the following embodiments. It is to be noted that the following descriptions of preferred embodiments of this invention are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.

FIGS. 1A˜1J are schematic cross-sectional views illustrating a process of fabricating a shallow trench isolation (STI) structure according to an embodiment of the present invention.

Firstly, as shown in FIG. 1A, a silicon substrate 1 is provided. A pad oxide layer 10 is formed on a surface of the silicon substrate 1. In addition, the silicon substrate 1 is divided into two areas, i.e. a high voltage device area 11 and a low voltage device area 12.

Then, a zero-etch process is performed by using a photolithography and etching process to define an alignment mark (not shown) on the silicon substrate 1. Especially, for performing the zero-etch process, a pattern for defining a shallow trench isolation structure of the high voltage device area 11 should be previously created in the photo mask. After the zero-etch process is performed, a preliminary shallow trench 110 is formed in the high voltage device area 11 (see FIG. 1B). The preliminary shallow trench 110 has a first depth. Since the device density of the high voltage device area 11 is relatively lower, there is a sufficient space for providing a tapered preliminary shallow trench 110. That is, the sidewall of the preliminary shallow trench 110 is not upright. By adjusting the etching conditions, the sidewall of the preliminary shallow trench 110 has a gentle slope. In an embodiment, the sidewall of the preliminary shallow trench 110 has an inclination angle in a range from 105 to 135 degrees.

Then, as shown in FIG. 1 C, an ion implantation process (as is indicated by the arrow) is performed to dope the high voltage device area 11 with a dopant. Consequently, a high voltage well region 119 is formed in the high voltage device area 11.

Then, as shown in FIG. 1D, a spacer 111 is formed on the sidewall of the preliminary shallow trench 110. For example, the spacer 111 is made of silicon oxide. In this embodiment, an anisotropic etching process is performed to remove the excess silicon oxide and the pad oxide layer 10 while remaining the spacer 111. By the spacer 111, the possibility of forming a residual (e.g. silicon nitride) on the sidewall of the preliminary shallow trench 110 in the subsequent process will be minimized. In other words, the spacer 111 is effective to improve the profile of the isolation structure in the subsequent process.

Then, as shown in FIG. 1E, a pad oxide layer 13 and a silicon nitride layer 14 are sequentially formed on the surface of the silicon substrate 1.

Then, a shallow trench etching process is performed to simultaneously form first shallow trenches 15 and second shallow trenches 16 in the high voltage device area 11 and the low voltage device area 12, respectively. The depth of the first shallow trench 15 in the high voltage device area 11 is greater than the depth of the second shallow trench 16 in the second trench 16 (see FIG. 1F). Since the preliminary shallow trench 110 formed by the zero-etch process contributes to an upper portion of the first shallow trench 15, the first shallow trench 15 with the upper portion and a lower portion becomes deeper than the second shallow trench 16. Under this circumstance, the isolation efficacy is enhanced. In other words, the depth of the first shallow trench 15 can be adjusted through the preliminary shallow trench 110. Since the method of the present invention is capable of adjusting the depth of the shallow trench in the high voltage device area, the conventional problem will be obviated.

However, a defect is possibly formed on the silicon substrate 1 after the shallow trench etching process is performed. For repairing the defect, the silicon substrate having the shallow trenches may be treated by a high temperature furnace process (at about 100° C.). Consequently, a silicon oxide repair linear layer (not shown) is formed on the sidewalls of the shallow trenches for repairing the defect and rounding the shape corners. Under this circumstance, the electrical isolation efficacy is enhanced.

Then, a high density plasma chemical vapor deposition (HDP-CVD) process is performed, and thus a silicon oxide layer 17 is filled within the first shallow trenches 15 and second shallow trenches 16 and formed on the silicon nitride layer 14. Then, a chemical mechanical polishing process is performed to remove the silicon oxide layer 17 overlying the silicon nitride layer 14, the top surface of the silicon oxide layer 17 is substantially at the same level as the topside of the silicon nitride layer 14 (see FIG. 1G).

Then, as shown in FIG. 1H, an etch-back process and a nitride oxide removing process are performed to remove the silicon nitride layer 14. Consequently, shallow trench isolation structures 180 and 181 made of silicon oxide are formed and partially exposed. The shallow trench isolation structures 180 are located at the high voltage device area 11. The shallow trench isolation structures 181 are located at the low voltage device area 12. The shallow trench isolation structure 180 is deeper than the shallow trench isolation structure 181. Moreover, the shallow trench isolation structure 180 has a shoulder part 1801 with a gentle slope.

Then, as shown in FIG. 1I, another ion implantation process is performed to produce other parts of the high voltage device, for example the high voltage field (HV field) region (see FIG. 2).

Then, as shown in FIG. 1J, one or more pre-clean processes are performed to treat the shallow trench isolation structure 180. Inevitably, the shallow trench isolation structure 180 is shrunk from the top surface to a location at a level near the shoulder part 1801. Then, a thermal oxidation process is performed, and thus a high voltage gate dielectric layer 191 is grown on the surface of the substrate 1 and the shallow trench isolation structure 180. Then, a high voltage gate conductor layer 192 is formed on the top surfaces of the high voltage gate dielectric layer 191 and the shallow trench isolation structure 180. In this embodiment, the high voltage gate dielectric layer 191 is produced by a high temperature furnace oxidation process. Moreover, the high voltage gate dielectric layer 191 is made of the same material as the shallow trench isolation structure 180. For example, the high voltage gate dielectric layer 191 is made of silicon oxide. Since the shallow trench isolation structure 180 has a shoulder part 1801 with a gentle slope, the thickness of the high voltage gate dielectric layer 191 over the shallow trench isolation structure 180 is distributed more uniformly. For example, the thickness dl of the high voltage gate dielectric layer 191 overlying the channel region 199 is about 950 angstroms, and the thickness d2 of the high voltage gate dielectric layer 191 at the edge of the channel region 199 is about 700 angstroms. Since the ratio of d2 to d1 is maintained at a ratio greater than 0.7, the high voltage device area has enhanced insulation efficacy and is suitable to be operated in the high voltage condition.

FIG. 2 is a schematic cross-sectional view illustrating a symmetric metal-oxide-semiconductor field-effect transistor with the shallow trench isolation structure produced by the method of the present invention. Take NMOS as an example. As shown in FIG. 2, a high voltage P-well region 20 is formed in a substrate 2. A high voltage N-field region 24 and a high voltage P-field region 25 are formed in the high voltage P-well region 20. A heavily P-doped region 220 and a heavily N-doped region 210 are formed served as a body contact region and a source/drain region, respectively. Moreover, the shallow trench isolation structures 200, 201 and 202 are produced by the fabricating method of the present invention. Consequently, the metal-oxide-semiconductor field-effect transistor has enhanced insulation efficacy and is suitable to be operated in the high voltage condition. Moreover, since the thickness distribution of the high voltage gate dielectric layer 21 is more uniform, if only the single-side shoulder parts 2000 and 2010 of the shallow trench isolation structures 200 and 201 in the channel region 23 under the high voltage gate dielectric layer 21 and the high voltage gate conductor layer 192 are created, the above benefits are also achievable. Of course, if all of the shallow trench isolation structures have the shoulder parts, the benefits will become more evident.

FIG. 3 is a schematic cross-sectional view illustrating an asymmetric metal-oxide-semiconductor field-effect transistor with the shallow trench isolation structure produced by the method of the present invention. In comparison with the symmetric metal-oxide-semiconductor field-effect transistor of FIG. 2, the shallow trench isolation structures 201, 202, the high voltage N-field region 24, the high voltage P-field region 25 and the heavily P-doped region 220 are not included in a side of the asymmetric metal-oxide-semiconductor field-effect transistor of FIG. 3. That is, only the heavily N-doped region 210 serving as the source/drain contact region and the outermost shallow trench isolation structure 30 are retained.

While the invention has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not be limited to the disclosed embodiment. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such modifications and similar structures. 

1. A fabricating method of a shallow trench isolation structure, the fabricating method comprising steps of: providing a substrate, wherein a high voltage device area is defined in the substrate; performing a first etching process to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area; performing a second etching process to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area; and filling a dielectric material in the first shallow trench, thereby forming a first shallow trench isolation structure.
 2. The fabricating method according to claim 1, wherein a low voltage device area is further defined in the substrate, and a second shallow trench is further formed in the low voltage device area by the second etching process, wherein the first shallow trench is deeper than the second shallow trench.
 3. The fabricating method according to claim 1, wherein an inclination angle of a sidewall of the preliminary shallow trench is from 105 to 135 degrees, so that the first shallow trench has a shoulder part with a gentle slope.
 4. The fabricating method according to claim 3, wherein after the first shallow trench isolation structure is formed, the fabricating method further comprises steps of: performing a pre-clean process to treat the shallow trench isolation structure, so that a top surface of the shallow trench isolation structure is shrunk to a location below the shoulder part; and forming a high voltage gate dielectric layer on the shallow trench isolation structure and a surface of the substrate.
 5. The fabricating method according to claim 1, wherein after the preliminary shallow trench is formed, the fabricating method further comprises a step of forming a spacer on a sidewall of the preliminary shallow trench, wherein the spacer is made of the same material as the dielectric material.
 6. The fabricating method according to claim 1, wherein after the preliminary shallow trench is formed and before the second etching process is done, the fabricating method further comprises a step of performing an ion implantation process to dope the high voltage device area of the substrate with a dopant, so that a high voltage well region is formed in the high voltage device area.
 7. The fabricating method according to claim 1, wherein the step of filling the dielectric material in the first shallow trench comprises sub-steps of: performing a high density plasma chemical vapor deposition process to deposit the dielectric material; and performing a chemical mechanical polishing process to flatten the dielectric material.
 8. A shallow trench isolation structure, comprising: a substrate, wherein a high voltage device area is defined in the substrate; a first shallow trench formed in the high voltage device area, wherein the first shallow trench has an upper portion and a lower portion, and a sidewall of the upper portion has a shoulder part with a gentle slope; and a dielectric material layer filled within the first shallow trench to a level near the shoulder part.
 9. The shallow trench isolation structure according to claim 8, wherein a low voltage device area is further defined in the substrate, and a second shallow trench is further formed in the low voltage device area by the second etching process, wherein the first shallow trench is deeper than the second shallow trench.
 10. The shallow trench isolation structure according to claim 8, wherein an inclination angle of the shoulder part is from 105 to 135 degrees.
 11. The shallow trench isolation structure according to claim 8, wherein the substrate is a silicon substrate, and the dielectric material layer is made of silicon oxide.
 12. The shallow trench isolation structure according to claim 8, further comprising: a high voltage gate dielectric layer formed on a surface of the substrate and in contact with the dielectric material layer; and a high voltage gate conductor layer formed on the top surfaces of the high voltage gate dielectric layer and the dielectric material layer.
 13. A high voltage metal-oxide-semiconductor field-effect transistor, comprising: a substrate; a channel region formed in the substrate; at least one shallow trench located at a side of the channel region, wherein the shallow trench has an upper portion and a lower portion, and a sidewall of the upper portion has a shoulder part with a gentle slope; and a dielectric material layer filled within the first shallow trench to a level near the shoulder part.
 14. The high voltage metal-oxide-semiconductor field-effect transistor according to claim 13, wherein an inclination angle of the shoulder part is from 105 to 135 degrees.
 15. The high voltage metal-oxide-semiconductor field-effect transistor according to claim 13, wherein the substrate is a silicon substrate, and the dielectric material layer is made of silicon oxide.
 16. The high voltage metal-oxide-semiconductor field-effect transistor according to claim 13, further comprising: a high voltage gate dielectric layer formed on a surface of the substrate and in contact with the dielectric material layer; and a high voltage gate conductor layer formed on the top surfaces of the high voltage gate dielectric layer and the dielectric material layer. 